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專注功率半導體器件的研發設計銷售
安建科技現已開發出600V~650V耐壓等級超級結(Super-junction , SJ) MOSFET ，由安建科技自主研發設計并掌握相關知識產權，采用深溝槽工藝，為國內目前元胞尺寸最小的SJ-MOS產品之一。
安建科技的SJ-MOS產品采用獨特的終端設計，在有效減小芯片面積的同時實現了器件的高可靠性。
基于SJ-MOS的技術特點，其主要應用于PD充電、LED電源、服務器電源，電動汽車充電樁等。
| Product | Package | Polarity | VDS | ID | VGS | VGS(th) | RDS(on)@ 10V | Datasheet | ||
| Min. | Max. | Typ. | Max. | |||||||
| V | A | V | V | V | mΩ | mΩ | ||||
| 篩選 | 篩選 | 篩選 | 篩選 | 篩選 | 篩選 | 篩選 | 篩選 | 篩選 | 篩選 | 重置篩選 |
| JMH60R080S | TO-247 | N | 600 | 42 | ±30 | 2.5 | 4.5 | 65 | 80 | |
| JMH60R080F | TO-247 | N | 600 | 42 | ±20 | 2.5 | 4.5 | 65 | 80 | |
| JMP60R160S | TO-220 | N | 600 | 22 | ±30 | 2.5 | 4.5 | 125 | 160 | |
| JMG60R160S | TO-220MF | N | 600 | 11 | ±30 | 2.5 | 4.5 | 125 | 160 | |
| JMG60R160F | TO-220MF | N | 600 | 11 | ±20 | 2.5 | 4.5 | 125 | 160 | |
| JMG60R320S | TO-220MF | N | 600 | 11 | ±30 | 2.5 | 4.5 | 270 | 320 | |
| JMD60R320S | TO-252 | N | 600 | 12 | ±30 | 2.5 | 4.5 | 270 | 320 | |
| JMN60R320S | DFN 8x8 | N | 600 | 11 | ±30 | 2.5 | 4.5 | 270 | 320 | |
| JCD60R380S | TO-252 | N | 600 | 11 | ±30 | 2.5 | 4.5 | 318 | 380 | |
| JCF60R380S | TO-220F | N | 600 | 9.6 | ±30 | 2.5 | 4.5 | 318 | 380 | |
| JMH65R100S | TO-247 | N | 650 | 35 | ±30 | 2.5 | 4.5 | 80 | 100 | |
| JMP65R100F | TO-220 | N | 650 | 25 | ±20 | 2.5 | 4.5 | 80 | 100 | |
| JMH65R100F | TO-247 | N | 650 | 35 | ±20 | 2.5 | 4.5 | 80 | 100 | |
| JMP65R190S | TO-220 | N | 650 | 20 | ±30 | 2.5 | 4.5 | 150 | 190 | |
| JMG65R190S | TO-220MF | N | 650 | 10 | ±30 | 2.5 | 4.5 | 150 | 190 | |
| JMG65R380S | TO-220MF | N | 650 | 9 | ±30 | 2.5 | 4.5 | 320 | 380 | |
| JMD65R380S | TO-252 | N | 650 | 10 | ±30 | 2.5 | 4.5 | 320 | 380 | |
| JMN65R380S | DFN 8x8 | N | 650 | 9.6 | ±30 | 2.5 | 4.5 | 320 | 380 | |
