產品技術
專注功率半導體器件的研發設計制造及提供完整的解決方案
JSAB IGBT 通過采用獨特的耐壓結構設計，確保產品可靠性達到國際一流水平。JSAB 650V 及 1200V IGBT 芯片均已通過業內最高標準的 175℃, 1000小時高溫反偏 (HTRB、HTGB) 老化加速可靠性測試 。
JSAB 650V IGBT 芯片可靠性測試
| Test Item | Stress Condition | Duration | Sample Size | Failure |
| HTRB | Vce= 480V, Vge= 0V, Tc = 175°C | 168hrs | 77 | 0 |
| 500hrs | 77 | 0 | ||
| 1000hrs | 77 | 0 | ||
| HTGB | Vge= 20V, Vce= 0V, Tc= 175°C | 168hrs | 77 | 0 |
| 500hrs | 77 | 0 | ||
| 1000hrs | 77 | 0 | ||
| AC | 121°C, 29.7 psia,100% RH | 96hrs | 77 | 0 |
| 168hrs | 77 | 0 | ||
| TC | -65/150°C,15 mins Dwell Time | 100cyc | 77 | 0 |
| 500cyc | 77 | 0 | ||
| 1000cyc | 77 | 0 | ||
| HTSL | Ta = 150°C | 168hrs | 77 | 0 |
