產(chǎn)品技術(shù)
專注功率半導(dǎo)體器件的研發(fā)設(shè)計(jì)制造及提供完整的解決方案
JSAB IGBT 通過(guò)采用獨(dú)特的耐壓結(jié)構(gòu)設(shè)計(jì)，確保產(chǎn)品可靠性達(dá)到國(guó)際一流水平。JSAB 650V 及 1200V IGBT 芯片均已通過(guò)業(yè)內(nèi)最高標(biāo)準(zhǔn)的 175℃, 1000小時(shí)高溫反偏 (HTRB、HTGB) 老化加速可靠性測(cè)試 。
JSAB 650V IGBT 芯片可靠性測(cè)試
| Test Item | Stress Condition | Duration | Sample Size | Failure |
| HTRB | Vce= 480V, Vge= 0V, Tc = 175°C | 168hrs | 77 | 0 |
| 500hrs | 77 | 0 | ||
| 1000hrs | 77 | 0 | ||
| HTGB | Vge= 20V, Vce= 0V, Tc= 175°C | 168hrs | 77 | 0 |
| 500hrs | 77 | 0 | ||
| 1000hrs | 77 | 0 | ||
| AC | 121°C, 29.7 psia,100% RH | 96hrs | 77 | 0 |
| 168hrs | 77 | 0 | ||
| TC | -65/150°C,15 mins Dwell Time | 100cyc | 77 | 0 |
| 500cyc | 77 | 0 | ||
| 1000cyc | 77 | 0 | ||
| HTSL | Ta = 150°C | 168hrs | 77 | 0 |
